High-throughput and full automatic DBC-module screening tester for high power IGBT
نویسندگان
چکیده
منابع مشابه
Investigation of Electrical Stress in High Voltage IGBT Power Module Using Finite Element Simulations
With increase in the demand for electrical power conversion and control, new power electronic technologies are being developed rapidly. The power conversion is possible because of silicon power devices which are the most important components of any power electronic system. Among the power devices, insulated gate bipolar transistors (IGBT) are more accepted and widely used in various application...
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System integration is one of the market driving issues in power electronics. In this paper the integration of precise shunts into IGBT modules, like it is done in Infineons MIPAQ family, is compared to on-IGBT-chip current sense functionality. Temperature measurement via NTC-resistor on DBC-level or on-IGBT-chip integrated temp-sense-diodes will be treated as well. Further processing of the low...
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The isolated base, plastic molded, power semiconductor module assembly has been available for various devices for over twenty years. During this time the power bipolar junction transistor, the BJT, has given way to the Insulated Gate Bipolar Junction Transistor, the IGBT, as the self commutatible device of choice especially for voltage source inverter topologies. As part of the power structure ...
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Introduction Trends in power electronics systems and devices over the last decade have placed increasing demands on the efficiencies of the thermal management systems used for power MOSFET and IGBT modules. The pressure to decrease the size of power electronics systems and, subsequently, the module, has resulted in a 50% footprint area reduction of some IGBT modules. This has resulted in higher...
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015